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2SB1407L |
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| Part Number | 2SB1407L |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Col... |
| Features |
ollector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat)
60 20 — —
V V
Notes: 1. The 2SB1407(L)/(S) is grouped by h FE1 as follows. B 60 to 120 C 100 to 200 D 160 to 320
2. Pulse test.
2
2SB1407(L)/(S)
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 iC (peak) –3 IC (max) Area of Safe Operation 20 Collector Current IC (A) PW = 10 ms s 1m n tio era Op °C) DC = 25 (T C –1.0 10 –... |
| Document |
 2SB1407L Data Sheet
PDF 31.03KB |
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