| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
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HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
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HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
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HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
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HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
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Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor |
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Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jul-04-1996 BBY 52 Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR |
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Siemens Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 53 Diode capacitance CT = f (VR) f = 1MHz 0.6 CT pF 0.4 0.3 0.2 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VR 5.0 Semiconductor |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-11-01 |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998- |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - Ω pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconduc |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 1 MHz VR = 2 V, f = 1 MHz VR = 2.38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - Ω pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 5 - pF VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) .3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistanc |
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Siemens Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz |
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HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
|
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|
HY |
PLASTIC SILICON RECTIFIERS ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 MECHANICAL DATA ●Case: JEDEC DO-27 molded plast |
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Desde 2024. D4U Semiconductor.
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