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NPN EPITAXIAL PLANAR TRANSISTOR N P N E P I TA X I A L P L A N A R T R A N S I S T O R The GSD669A is designed for frequency power amplifier. *Low frequency power amplifier Complementary pair with GSB649A Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR 07 Max. 100 100 300 1.2 700 600 19 Unit V V V nA nA mV mV mV Test Conditions IC=100uA IC=1mA IE=10uA VBE=60V VBE=6V lC=1A,IB=50mA IC=1A, IB=50mA VCE=2V,IC=50mA VCE=2V,IC=100mA VCE=2V,IC=1A VCE=2V,IC=100mA VCB=10V ,IE=0,f=1MHz VCE=10V,IC=100mA IB1=-IB |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR 1/3 NPN EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION The GSD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment . *Adoption of FBET, MBIT processes *Low collector-to-emitter saturation |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR *High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz) Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR 2V, IC=100mA VCE=2V, IE=-100mA, f=100MHz VCB=10V, f=1MHz *Pulsed Test Classification Of hFE Rank Range EUC 120 ~ 200 EUD 160 ~ 300 EUE 250 ~ 500 GSD2656 Page: 1/2 ISSUED DATE :2006/01/18 REVISED DATE : Characteristics Curve Important Notice: Al |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR 0 MHz Pf Unit V V V uA uA V V IC=100uA ,IE=0 IC=1mA,IB=0 IE=10uA VCB=30V VEB=3V IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V,IE=0, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Q Range 230-380 R 340-600 S 560-800 1/2 CORPORATION Characteristics Curve IS |
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NPN EPITAXIAL PLANAR TRANSISTOR =7V IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range Q 230-380 R 340-600 S 560-800 1/2 CORPORATION Characteristics Curve |
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NPN EPITAXIAL PLANAR TRANSISTOR B=60V VEB=7V IC=1A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range Q 230-380 R 340-600 S 560-800 1/2 CORPORATION Characteristic |
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Desde 2024. D4U Semiconductor.
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