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GSD965 |
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| Part Number | GSD965 |
| Manufacturer | GTM |
| Description | NPN EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B The GSD965 is designed for use as AF output amplifier and flash unit Package Dimensions D E S1 TO-92 A b1 SE A ... |
| Features |
IC=3A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions
Classification Of hFE1
Rank Q Range 230-380
R 340-600
S 560-800
1/2
CORPORATION
Characteristics Curve
ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications,... |
| Document |
 GSD965 Data Sheet
PDF 169.53KB |
Similar Datasheet
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