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GSD965AA |
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| Part Number | GSD965AA |
| Manufacturer | GTM |
| Description | Package Dimensions D E S1 ISSUED DATE :2005/02/17 REVISED DATE : NPN EPITAXIAL PLANAR TRANSISTOR The GSD965AA is designed for use as AF output amplifier and flash unit. TO-92 A b1 S E A T IN G P... |
| Features |
B=60V VEB=7V IC=1A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions
Classification Of hFE1
Rank Range Q 230-380 R 340-600 S 560-800
1/2
CORPORATION
Characteristics Curve
ISSUED DATE :2005/02/17 REVISED DATE :
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications,... |
| Document |
 GSD965AA Data Sheet
PDF 176.23KB |
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