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NPN EPITAXIAL PLANAR TRANSISTOR V mV mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=30V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A Test Conditions Classification Of h |
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PNP EPITAXIAL PLANAR TRANSISTOR Package Dimensions D P N P E P I TA X I A L P L A N A R T R A N S I S T O R The GSB649A is designed for frequency power amplifier. *Low frequency power amplifier Complementary pair with GSD669A E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e |
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GTM |
PNP EPITAXIAL PLANAR TRANSISTOR Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 500 MHz Pf Unit V V V uA uA V V IC=-100uA IC=-10mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-20V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pul |
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GTM |
SWITCHING DIODE Condition IF = 150mA VR = 75V Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt. 2. Measured at applied forward current of 5mA and reverse volta |
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GTM |
PNP EPITAXIAL TRANSISTOR mA, IB=-25mA VCE=-2V, IC=-100mA VCE=-2V, IE=100mA, f=100MHz VCB=-10V, f=1MHz *Pulsed Test Classification Of hFE Rank Range ESC 100 ~ 200 ESD 160 ~ 300 ESE 250 ~ 500 GSB1694 Page: 1/2 ISSUED DATE :2006/01/18 REVISED DATE : Characteristics Curve |
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GTM |
PNP EPITAXIAL PLANAR TRANSISTOR High current output up to -3A Low saturation voltage Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 |
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SWITCHING DIODE 25 Characteristic Reverse Breakdown Voltage Symbol V(BR) VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr Min. 85 - unless otherwise noted) Max. 715 855 1000 1250 1 2 6 Unit V mV mV mV mV uA |
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GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE tal Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Cu |
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SURFACE MOUNT SCHOTTKY BARRIER DIODE tal Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Cu |
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GTM |
SURFACE MOUNT SCHOTTKY BARRIER DIODE er Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise no |
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GTM |
NPN EPITAXIAL PLANAR TRANSISTOR V mV mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=30V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A Test Conditions Classification Of h |
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GTM |
PNP EPITAXIAL SILICON TRANSISTOR *Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). *Excellent DC current gain characteristics. *Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B |
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PNP EPITAXIAL PLANAR TRANSISTOR Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 1.40 0.35 5 0.52 1.60 0.41 T |
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SURFACE MOUNT SCHOTTKY BARRIER DIODE tal Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Cu |
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SURFACE MOUNT SCHOTTKY BARRIER DIODE tal Power Dissipation Symbol Tj Tstg VRRM R JA Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225 Unit V /W A A mW IFSM Io PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Cu |
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SURFACE MOUNT SCHOTTKY BARRIER DIODE er Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise no |
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SURFACE MOUNT SCHOTTKY BARRIER DIODE er Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise no |
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SURFACE MOUNT SCHOTTKY BARRIER DIODE er Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise no |
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GTM |
SWITCHING DIODE 150 130 500 1 250 V V mA mA A mW Unit Electrical Characteristics (at TA = 25 Parameter Reverse Voltage Symbol VR VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Diode Capacitance Reverse Recovery Time IR CD Trr Min. 85 - unless otherwise no |
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PNP EPITAXIAL PLANAR TRANSISTOR 0uA VCE=-25V VEB=-4V IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-1V, IC=-100mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0A * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range 9FA 100 - 250 9FB 160 |
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Desde 2024. D4U Semiconductor.
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