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GSBAS70C |
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| Part Number | GSBAS70C |
| Manufacturer | GTM |
| Description | ISSUED DATE :2005/12/29 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A These Schottky barrier diodes are designed for high... |
| Features |
er Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R
JA
Ratings +125 -65 ~ +125 70 70 100 445 225
Unit
V mA mA /W mW
PD
Electrical Characteristics (at TA = 25
Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF
unless otherwise noted)
Min. 70 Typ. Max. 410 750 1000 100 10 2.0 5.0 nA uA pF ns mV Unit V IR=10 A IF1=1mA IF1=10mA IF2=15mA VR1=50V VR2=70V VR=0V, f=1MHz IF=IR=10mA, RL =100 , Irr=1mA Test Conditions
Reverse Leakage Current Total Capacitance Reverse Recover Time
IR CT Trr
GSAS70/A/C/S
Page: 1/2
CORPORATION
Characteristics Curve
ISSUED DATE :2005/12/29 REVISED... |
| Document |
 GSBAS70C Data Sheet
PDF 196.25KB |
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