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GSBC807 |
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| Part Number | GSBC807 |
| Manufacturer | GTM |
| Description | Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. REF. A A1 A2 D E H... |
| Features |
0uA VCE=-25V VEB=-4V IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-1V, IC=-100mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0A * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions
Classification Of hFE
Rank Range 9FA 100 - 250 9FB 160 - 400 9FC 250 - 630
1/2
ISSUED DATE :2005/06/08 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitab... |
| Document |
 GSBC807 Data Sheet
PDF 184.45KB |
Similar Datasheet
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| 2 | GSBC846 |
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| 4 | GSBC848 |
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| 6 | GSBC857 |
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