GME SA1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	SA14	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
2	SA16	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
3	2SA1797	GME	PNP Transistor  Low saturation voltage VCE(sat)=-0.35V(Max.) (IC/IB=-1A/-0.5A).  Excellent DC current gain characteristics.  Complements the 2SA1797 and 2SC4672.  MSL 3 APPLICATIONS  Low frequency transistor. Pb Lead-free ORDERING INFORMATION Type No. Mark
4	SA17	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
5	2SA1012	GME	PNP Epitaxial Silicon Transistor  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Complements the 2SC2562. Pb Lead-free  High Speed Switching Time:tstg=1.0µs(Typ.) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies
6	2SA1662	GME	Silicon NPN Transistor  Complementary to KTC4374 Pb Lead-free Production specification 2SA1662 ORDERING INFORMATION Type No. Marking 2SA1662 FO/FY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Colle
7	2SA1774	GME	PNP General Purpose Transistor  Excellent hFE linearity.  Complementary NPN type available (2SC4617).  MSL 1 APPLICATIONS  Epitaxial planar type.  PNP silicon transistor. Pb Lead-free ORDERING INFORMATION Type No. Marking 2SA1774 FQ/FR/FS 2SA1774 SOT-523 Package Code S
8	2SA1576A	GME	PNP Silicon Transistor  Power dissipation.(PC=200mW)  Excellent HFE Linearity.  Complements the 2SC4081. Pb Lead-free 2SA1576A APPLICATIONS  General purpose application.  Switching and amplification. ORDERING INFORMATION Type No. Marking 2SA1576A FQ/FR/FS SOT
9	SA110	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
10	SA160	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
11	SA160A	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
12	SA170	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
13	SA12	GME	TRANSIENT VOLTAGE SUPPRESSOR Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passivated junction 500W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% Excellent clamping capability Low incremental surg
14	2SA1832	GME	Plastic-Encapsulate Transistors  High voltage and high current.  Excellent hFE linearity.  High hFE.  Complementary to 2sc4738.  Small package. Pb Lead-free Production specification 2SA1832 ORDERING INFORMATION Type No. Marking 2SA1832 SO/SY/SG SOT-523 Package Code SOT
15	2SA1162	GME	Silicon Epitaxial Planar Transistor  Excellent hFE linearity.  Commplementary to 2SC2712.  High voltage and high current.  Low noise. Pb Lead-free 2SA1162 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code
16	2SA1015	GME	Silicon Epitaxial Planar Transistor z Complementary To 2SC1815. z Excellent HFE Linearity. Pb Lead-free z High voltage and high current. z Low noise. z Collector-Emitter voltage BVCEO=-50V. APPLICATIONS z Low frequency , low noise amplifier. Production specification 2SA1015 SOT-2
17	2SA1611	GME	PNP Silicon Transistor  High voltage VCEO=-50V.  Excellent HFE Linearity.  High DC current gain : hFE=200 typ.  Complementary to 2SC4177. Pb Lead-free Production specification 2SA1611 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING I
18	2SA1586	GME	PNP Silicon Transistor  High voltage and high current.  Excellent HFE Linearity.  High hFE linearity.  Complementary to 2SC4116. Pb Lead-free Production specification 2SA1586 APPLICATIONS  Audio frequency general purpose amplifier applications. ORDERING INFORMATIO
19	2SA1579	GME	PNP Silicon Transistor  Power dissipation.(PC=200mW)  Excellent HFE Linearity. Pb Lead-free Production specification 2SA1579 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1579 RP/ RR/RS SOT-323 Package Code SOT-323 MAXIMUM
20	2SA1700	GME	PNP Epitaxial Planar Silicon Transistor z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value