Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon PNP Transistor |
| Description | Bipolar Transistors Silicon PNP Epitaxial Type 2SA1832 1. Applications • Low-Frequency Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent h. |
| Features | (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) (6) Complementary to 2SC4738 (7) Small package 3. Packaging 2SA1832 SSM 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices &. |
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | JCST |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SA1832 TRANSISTOR (PNP) SOT-523 FEATURES z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD R. |
| Features | z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Value -50 -50 . |
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | GME |
| Title | Plastic-Encapsulate Transistors |
| Description | Plastic-Encapsulate Transistors FEATURES High voltage and high current. Excellent hFE linearity. High hFE. Complementary to 2sc4738. Small package. Pb Lead-free Production specification 2SA1832 ORDERING INFORMATION Type No. Marking 2SA1832 SO/SY/SG SOT-523 Package Code SOT-523 MA. |
| Features |
High voltage and high current. Excellent hFE linearity. High hFE. Complementary to 2sc4738. Small package. Pb Lead-free Production specification 2SA1832 ORDERING INFORMATION Type No. Marking 2SA1832 SO/SY/SG SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Limits VCBO collector-base voltage -50 VCEO collector-emitter voltag. |
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | Secos |
| Title | PNP Transistor |
| Description | 2SA1832 Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage and High Current Excellent hFE Linearity Complementary to 2SC4738 A M 3 SOT-523 3 CLASSIFICATION OF hFE P. |
| Features | High Voltage and High Current Excellent hFE Linearity Complementary to 2SC4738 A M 3 SOT-523 3 CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1832-Y 120~240 SY 2SA1832-GR 200~400 SG F K Top View 1 2 C B 1 2 L E D G H J PACKAGE INFORMATION Package SOT-523 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 REF. . |
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | WEITRON |
| Title | PNP TRANSISTOR |
| Description | 2SA1832 PNP TRANSISTOR P b Lead(Pb)-Free FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V V V. |
| Features | * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Value -50 -50 -5 -150 100 125 -55 to +125 -55 to +125 Units V V V mA mW ℃/W ℃ ℃ 3 1 2 SOT-523(SC-75) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Total Device. |
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | TOPSKY |
| Title | Plastic-Encapsulate Transistors |
| Description | Production specification Plastic-Encapsulate Transistors FEATURES z z z z z High voltage and high current Excellent hFE linearity High hFE Complementary to 2sc4738 Small package 2SA1832 Pb Lead-free SOT-523 ORDERING INFORMATION Type No. 2SA1832 Marking SO/SY/SG Package Code SOT-523 MAXIMUM RAT. |
| Features | z z z z z High voltage and high current Excellent hFE linearity High hFE Complementary to 2sc4738 Small package 2SA1832 Pb Lead-free SOT-523 ORDERING INFORMATION Type No. 2SA1832 Marking SO/SY/SG Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tstg Tj Parameter collector-base voltage collector-emitter voltage emitter-base voltage collecto. |
2SA1832 |
| Part Number | 2SA1832 |
| Manufacturer | Kexin |
| Title | Silicon PNP Transistor |
| Description | SMD Type Silicon PNP Epitaxial Type Transistor 2SA1832 Transistors IC SOT-523 +0.1 1.6-0.1 Unit: mm Features High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) Excellent hFE Linearity : hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) High hFE: hFE=70 to 400 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.. |
| Features | High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) Excellent hFE Linearity : hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) High hFE: hFE=70 to 400 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 +0.1 0.5-0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emi. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1830 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA1831 |
Sanyo Semicon Device |
PNP Triple Diffused Planar Silicon Transistors |
|
| 3 | 2SA1832-GR |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 4 | 2SA1832-Y |
MCC |
PNP Silicon Epitaxial Transistor |
|
| 5 | 2SA1834 |
Rohm |
Low Vce(sat) Transistor |
|
| 6 | 2SA1836 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SA1837 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SA1837 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 9 | 2SA1837 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 10 | 2SA1837 |
JILIN SINO |
PNP Epitaxial Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
|