Distributor | Stock | Price | Buy |
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2SA1012 |
Part Number | 2SA1012 |
Manufacturer | SEMTECH |
Title | PNP Transistor |
Description | 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Coll. |
Features | hFE Y hFE hFE -V(BR)CEO -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob 70 120 30 50 - - - - - Typ. Max. - 140 - 240 - - - - - 1 - 1 - 0.4 - 1.2 60 - 170 - Unit V µA µA V V MHz pF SEMTECH ELECTRONICS LTD. ® Dated : 17/09/2016 Rev: 01 2SA1012 SEMTECH ELECTRONICS LTD. ® Dated : 17/09/2016 Rev: 01 2SA1012 SEMTECH ELECTRONICS LTD. ® Dated : 17/09/2016 Rev: 01 2SA1012 T. |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | Toshiba Semiconductor |
Title | TRANSISITOR |
Description | . |
Features | . |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | UTC |
Title | PNP SILICON TRANSISTOR |
Description | , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-015.N . |
Features | *Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At IC=-3A *High Speed Switching Time: tS=1.0s (Typ.) *Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T TO-220 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T TO-220F 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T TO-251 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R TO-252 Note: Pin As. |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon PNP transistor |
Description | TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ,, 2SC2562 。 Low collector saturation voltage, high speed switching time, complementary to 2SC2562. / Applications 。 High current switching applications. / Equivalent Circuit / Pinning 12 3 PIN1:Base PIN 2:C. |
Features | ,, 2SC2562 。 Low collector saturation voltage, high speed switching time, complementary to 2SC2562. / Applications 。 High current switching applications. / Equivalent Circuit / Pinning 12 3 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 70~140 Y 120~240 http://www.fsbrec.com 1/6 2SA1012 Rev.F Mar.-2016 / Absolut. |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | INCHANGE |
Title | TO-252 PNP Transistor |
Description | ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MA. |
Features | ; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A ICBO Collector Cutoff Current VCB= -50V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -1V hFE-2 DC Current Gain IC= -3A ; VCE= -1V hFE-1 Classifications O Y 70-140 120-240 2SA1012 MIN TYP. MAX UNIT -50 V -0.4 V -1.2 V -1 μA -1 μA 70 240 30 NOTICE. |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | MCC |
Title | PNP Transistor |
Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1012 Features • Capable of 25 Watts of Power Dissipation. • Collector-current -5.0A and Collector-base Voltage -60V • Operating and storage j. |
Features |
• Capable of 25 Watts of Power Dissipation. • Collector-current -5.0A and Collector-base Voltage -60V • Operating and storage junction temperature range: -55к to +150к • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Electrical Characteristics @ 25OC Unless Otherwi. |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | LGE |
Title | PNP Transistor |
Description | 2SA1012(PNP) TO-220 Transistor 1. BASE 2. COLLECTOTR 3. EMITTER TO-220 Features 3 2 1 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25. |
Features | 3 2 1 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Cont. |
2SA1012 |
Part Number | 2SA1012 |
Manufacturer | Bruckewell |
Title | PNP Transistors |
Description | 2SA1012 Plastic-Encapsulate Transistors (PNP) Features • High Current Switching Applications. • Low Collector Saturation Voltage • High Speed Swithing Time • RoHS compliant package Applications • High speed switching Packing & Order Information 3,000/Reel Graphic symbol MAXIMUM RATINGS AND ELECTRIC. |
Features |
• High Current Switching Applications. • Low Collector Saturation Voltage • High Speed Swithing Time • RoHS compliant package Applications • High speed switching Packing & Order Information 3,000/Reel Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATING @ Ta=25°C unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA101 |
ETC |
Ge PNP Drift Transistor | |
2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR | |
3 | 2SA1010 |
INCHANGE |
PNP Transistor | |
4 | 2SA1010 |
SavantIC |
Silicon POwer Transistors | |
5 | 2SA1011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SA1011 |
Inchange Semiconductor |
POWER TRANSISTOR | |
7 | 2SA1011 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
8 | 2SA1012-D |
INCHANGE |
PNP Transistor | |
9 | 2SA1012Z |
SEMTECH |
PNP Silicon Transistor | |
10 | 2SA1013 |
Toshiba Semiconductor |
Silicon PNP Transistor |