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2SA1012 |
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| Part Number | 2SA1012 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
; IB= -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
hFE-2
DC Current Gain
IC= -3A ; VCE= -1V
hFE-1 Classifications O Y 70-140 120-240 2SA1012 MIN TYP. MAX UNIT -50 V -0.4 V -1.2 V -1 μA -1 μA 70 240 30 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of ou... |
| Document |
 2SA1012 Data Sheet
PDF 242.73KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA101 |
ETC |
Ge PNP Drift Transistor |
|
| 2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1010 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SA1010 |
SavantIC |
Silicon POwer Transistors |
|
| 5 | 2SA1011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1011 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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