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2SA1012 |
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| Part Number | 2SA1012 |
| Manufacturer | GME |
| Description | PNP Epitaxial Silicon Transistor FEATURES Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A Complements the 2SC2562. Pb Lead-free High Speed Switching Time:tstg=1.0µs(Typ.) Pr... |
| Features |
Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A Complements the 2SC2562. Pb Lead-free High Speed Switching Time:tstg=1.0µs(Typ.) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -50 V -5 V -5 A 2W -55 to +150 ℃ X028 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Sil... |
| Document |
 2SA1012 Data Sheet
PDF 227.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA101 |
ETC |
Ge PNP Drift Transistor |
|
| 2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SA1010 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SA1010 |
SavantIC |
Silicon POwer Transistors |
|
| 5 | 2SA1011 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA1011 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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