| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
MD |
5V-Adjustable High-PSRR Low-Noise LDO CMOS Voltage Regulator include enable function, power good flag and output noise reduction pin. APPLICATIONS ⚫ Smart wearer ⚫ Long-life battery-powered devices ⚫ Portable mobile devices, such as mobile phones, cameras, and so on ⚫ Wireless communication equipment TYPICA |
|
|
|
|
Filtronic Compound Semiconductors |
GENERAL PURPOSE PHEMT • • • • • 20.5 dBm Output Power (P1dB) 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The www.DataSheet4U.com FPD7612 is an |
|
|
|
|
Data Delay Devices |
22-BIT PROGRAMMABLE PULSE GENERATOR • • • • • • • • • All-silicon, low-power CMOS technology TTL/CMOS compatible inputs and outputs Vapor phase, IR and wave solderable Programmable via serial interface Increment range: 0.25ns through 50.0ns Pulse width tolerance: 1% (See Table 1) Suppl |
|
|
|
|
Data Delay Devices |
(3D7608 / 3D7612) 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS • • • • • • • • • All-silicon, low-power CMOS technology TTL/CMOS compatible inputs and outputs Vapor phase, IR and wave solderable Programmable via latched parallel interface Increment range: 0.25ns through 800us Pulse width tolerance: 1% (See Table |
|
|
|
|
Filtronic Compound Semiconductors |
HI-FREQUENCY PACKAGED PHEMT nt Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| θJC VDS = 1.3 V; VGS = 0 |
|
|
|
|
Rohm |
Power Management IC Low current consumption 10µA (Typ) 2 Channel LDO 2.7V UVLO detection 1 Channel GPO Thermal Shut Down function 2 line serial interface which supports I2C bus protocol. Key Parameters Input voltage range ： Output voltage(LDO1)： Outpu |
|
|
|
|
INCHANGE |
NPN Transistor 10mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current IEBO Emitter Cuto |
|
|
|
|
MD |
5V-Adjustable High-PSRR Low-Noise LDO CMOS Voltage Regulator include enable function, power good flag and output noise reduction pin. APPLICATIONS ⚫ Smart wearer ⚫ Long-life battery-powered devices ⚫ Portable mobile devices, such as mobile phones, cameras, and so on ⚫ Wireless communication equipment TYPICA |
|
|
|
|
MD |
5V-Adjustable High-PSRR Low-Noise LDO CMOS Voltage Regulator include enable function, power good flag and output noise reduction pin. APPLICATIONS ⚫ Smart wearer ⚫ Long-life battery-powered devices ⚫ Portable mobile devices, such as mobile phones, cameras, and so on ⚫ Wireless communication equipment TYPICA |
|
|
|
|
Analog Devices |
16-bit charge redistribution successive approximation register Multiple pins/software programmable input ranges: 5 V, 10 V, ±5 V, ±10 V Pins or serial SPI®-compatible input ranges/mode selection Throughput 750 kSPS (warp mode) 600 kSPS (normal mode) 500 kSPS (impulse mode) INL: ±0.75 LSB typical, ±1.5 LSB maximu |
|
|
|
|
Data Delay Devices |
(3D7608 / 3D7612) 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS • • • • • • • • • All-silicon, low-power CMOS technology TTL/CMOS compatible inputs and outputs Vapor phase, IR and wave solderable Programmable via latched parallel interface Increment range: 0.25ns through 800us Pulse width tolerance: 1% (See Table |
|
|
|
|
ETC |
Black and white TV image signal processing circuit sound system ¨²Ë AGC Ù ³ Ó Ñ ÆÖØ¿ AGC ö ³ ä Ê ÄÜ Å½ýÒ 9 10 11 12 13 14 15 16 ·û ºÅ TAIF TASIF VCC OUTVF GND FILAGC FIL INIF ö³äʵÆÓÊ µÆÐÖ ëÈäʵÆÐÖ Øµ AGC ¨ ² Ë Â ¨²Ë ¹¦ ·ÂØ»³Ð÷µ çÂøÍàÏÆÒ ´Ôçµ ÄÜ CONRFAGC OUTRFAGC INSIF TASIF OUTAF TAIF 3. ÔÐØÌçµ 3.1 ý Ê Î ² Þ |
|
|
|
|
GE |
NPN POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • High collector power dissipation: Po = 4W @ TA = 25°C (Four device action) • High collector current: IC =5A (Max.) • High DC current gain: hFE = 2000 (Min.) @ |
|
|
|
|
GE |
NPN POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • Zener diode included between collector and base • High co.llector power dissipation: PD = 4W @ TA = 25°C (Four device action) • High collector current: IC = 2 |
|
|
|
|
GE |
NPN POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • High collector power dissipation: Po =4.0W @ TA =25° C (Four device action) • High collector current: IC = ±3A (Max.) • High DC current gain: hFE = 500 (Min.) |
|
|
|
|
GE |
NPN POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • High collector power dissipation: PD =4W @ TA =25° C (Four device action) • High collector current: IC =4A (Max.) • High DC current gain: hFE =2000 (Min.) @ V |
|
|
|
|
GE |
NPN/PNP POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • Zener diode included between collector and base • High collector power dissipation: Po =4.0W @ TA =25° C (Four device action) • High collector current: IC = ± |
|
|
|
|
GE |
NPN POWER TRANSISTOR • Epoxy single-inline package (10 pin) • High DC current gain: hFE =500 (Min.) (lc =400mA) • Low saturation voltage: VCE(sat) = 0.5V (Max.) (lc = 300mA) CASE STYLE SIP-10 PIN DIMENSIONS ARE IN INCHES AND (MILLIMETERS) ARRAY CONFIGURATION 35 79 |
|
|
|
|
GE |
NPN/PMP POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • High collector power dissipation: Po = 4.0W @ TA = 25° C (Four device action) • High collector current: IC = ±4A (Max.) • High DC current gain: hFE = 2000 (Mi |
|
|
|
|
GE |
NPN POWER TRANSISTOR • High reliability small-sized available (4 in 1) • Epoxy single-inline package (10 pin) • High collector power dissipation: PD =4W @ TA = 25°C (Four device action) • High collector current: IC = 3A (Max.) • High DC current gain: hFE = 2000 (Min.) @ |
|
Desde 2024. D4U Semiconductor.
|