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FPD7612 |
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| Part Number | FPD7612 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-b... |
| Features |
• • • • • 20.5 dBm Output Power (P1dB) 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency Datasheet v3.0 LAYOUT: GENERAL DESCRIPTION: The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applicati... |
| Document |
 FPD7612 Data Sheet
PDF 315.60KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FPD7612P70 |
Filtronic Compound Semiconductors |
HI-FREQUENCY PACKAGED PHEMT |
|
| 2 | FPD750 |
Filtronic Compound Semiconductors |
0.5W POWER PHEMT |
|
| 3 | FPD750DFN |
Filtronic Compound Semiconductors |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
|
| 4 | FPD750P100 |
Filtronic Compound Semiconductors |
0.5W PACKAGED POWER PHEMT |
|
| 5 | FPD750SOT343 |
Filtronic Compound Semiconductors |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
|
| 6 | FPD750SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
|
Desde 2024. D4U Semiconductor.
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