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FPD7612P70 |
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| Part Number | FPD7612P70 |
| Manufacturer | Filtronic Compound Semiconductors |
| Description | AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by hig... |
| Features |
nt Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| θJC VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.2 mA IGS = 0.2 mA IGD = 0.2 mA VDS > 3V 0.7 12 14.5 45 60 120 80 1 0.9 14 16 335 10 1.3 75 mA mA mS µA V V V °C/W NF IP3 VDS = 5 V; IDS = 25% IDSS VDS = 5V; IDS = 50% IDSS Symbol P1dB SSG PAE MSG Test Conditions VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS =... |
| Document |
 FPD7612P70 Data Sheet
PDF 222.17KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FPD7612 |
Filtronic Compound Semiconductors |
GENERAL PURPOSE PHEMT |
|
| 2 | FPD750 |
Filtronic Compound Semiconductors |
0.5W POWER PHEMT |
|
| 3 | FPD750DFN |
Filtronic Compound Semiconductors |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
|
| 4 | FPD750P100 |
Filtronic Compound Semiconductors |
0.5W PACKAGED POWER PHEMT |
|
| 5 | FPD750SOT343 |
Filtronic Compound Semiconductors |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
|
| 6 | FPD750SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
|
Desde 2024. D4U Semiconductor.
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