| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS |
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Fairchild Semiconductor |
800V N-Channel MOSFET • 8.0 A, 800 V, RDS(on) = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A • Low Gate Charge (Typ. 35 nC) • Low Crss (Typ. 13 pF) • 100% Avalanche Tested D GDS TO-220 GDS D G TO-220F S G TO-220F Y-formed Absolute Maximum Ratings TC = 25°C unless other |
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Fairchild Semiconductor |
MOSFET • Typ. RDS(on) = 710 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 22 nC) • Low Eoss (Typ. 2.3 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications De |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 850 m (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterrupt |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant N-Channel UniFETTM II MOSFET Description UniFETTM I |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.0 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterrupt |
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Fairchild Semiconductor |
Switching mode power supply/ light dimmer/ electric flasher unit/ hair drier 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Paramet |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 53A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typical 86 nC) Low Crss ( typical 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220 |
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Fairchild Semiconductor |
100V P-Channel MOSFET • • • • • • • -5.3A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQPF Seri |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-D |
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Fairchild Semiconductor |
600V N-Channel MOSFET This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi |
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Fairchild Semiconductor |
FQPF8N60C • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G! ● ◀▲ ● ● ! S Ab |
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Desde 2024. D4U Semiconductor.
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