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FQPF8P10 |
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| Part Number | FQPF8P10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -5.3A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF8P10 -100 -5.3 -3.8 -21.2 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V... |
| Document |
 FQPF8P10 Data Sheet
PDF 667.33KB |
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Desde 2024. D4U Semiconductor.
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