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FQPF8N90C |
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| Part Number | FQPF8N90C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especi... |
| Features |
• • • • • • 6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP8N90C 900 6.3 3.8 25 FQPF8N90C 6.3 * 3.8 * 25 * ± 30 850 6.3 17.1 4.0 Units V A A A V mJ A mJ V/ns... |
| Document |
 FQPF8N90C Data Sheet
PDF 903.36KB |
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