| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
KSB564AY h Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz 110 18 70 Min. -30 -25 -5 -0.1 400 -0. |
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Fairchild Semiconductor |
PNP Silicon Epitaxial Transistor V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz Min. -80 40 15 Typ. -1 -1 9 130 Max. - 30 - 100 240 Units V µA µA - 1.7 - 1.5 V V MHz pF hFE Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Sem |
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Fairchild Semiconductor |
Low Frequency Power Amplifier 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Min. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 ©2000 Fairchild Semiconductor Int |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = - 30V, IC = - 1A IB1 = -IB2 = -0.2A RL = 30Ω 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 Min. - 60 Typ. Max. |
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Fairchild Semiconductor |
PNP Silicon Darlington Transistor - 25mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 1A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 4mA IC = - 2A, IB = - 4mA VCC = - 30V, IC = - 3A IB1 = - IB2 = - 6mA RL = 10Ω 0.3 0.6 0.25 2000 1000 - 1.5 -2 V V µs µs µs Min. - 40 T |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C u |
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Fairchild Semiconductor |
Low Frequency Power Amplifier - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Typ. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Cassification Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ |
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Fairchild Semiconductor |
Audio Frequency Power Amplifier = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -0.5A IC = -1.5A, IC = -0.15A IC = -1.5A, IB = -0.15A VCE = -5V, IC = -0.1A VCB = -10V, IE = 0 f = 1MHz 30 60 120 100 -0.5 -0.8 45 60 Min. Typ. Max. -1 -1 320 -2 -2 V V MHz pF Units µA µA * Pulse Test: PW≤3 |
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Fairchild Semiconductor |
PNP Planar Silicon Transistor idth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = - 5mA, IE = 0 IC = - 10mA, RBE = ∞ IE = - 5mA, IC = 0 VCB = - 80V, IE = 0 VBE = - 4V, IC = 0 VCE = - 5V, IC = - 1A VCE = - 5V, IC = - 6A IC = - 5A, IB = - 0.5A VC |
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Fairchild Semiconductor |
PNP Silicon Darlington Transistor IC = - 50mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 3V, IC = - 3A VCE = - 3V, IC = - 7A IC = - 3A, IB = - 6mA IC = - 7A, IB = - 14mA IC = - 3A, IB = - 6mA VCC = - 45V, IC = - 3A IB1 = - IB2 = - 6mA RL = 15Ω 2000 1000 - 0.95 - 1.3 - 1. |
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Fairchild Semiconductor |
Low Frequency Power Amplifier VCE = - 2V, IC= - 3A VCE = - 2V, IC = - 5A IC = - 3A, IB = - 3mA IC = - 3A, IB = - 3mA VCC = - 50V, IC = - 3A IB1 = - IB2 = - 3mA RL = 17Ω 0.5 1 1 2000 500 Min. Typ. Max. -1 -3 15K - 1.5 -2 V V µs µs µs Units µA mA * Pulse Test: PW≤350µs, Duty Cycl |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor Cut-off Current * DC Current Gain : KSB1116 : KSB1116A Test Condition VCB= -60V, IE=0 VEB= -6V, IC= 0 VCE= -2V, IC= -100mA VCE= -2V, IC = -1A VCE= -2V, IC= -50mA IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -100mA VCC= |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor Cut-off Current * DC Current Gain : KSB1116 : KSB1116A Test Condition VCB= -60V, IE=0 VEB= -6V, IC= 0 VCE= -2V, IC= -100mA VCE= -2V, IC = -1A VCE= -2V, IC= -50mA IC= -1A, IB= -50mA IC= -1A, IB= -50mA VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -100mA VCC= |
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Fairchild Semiconductor |
PNP Epitaxial Planar Silicon Transistor Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance * Turn On Time * Storage Time * Fall time Test Condition IC= -10µA, IE= 0 IC= -1mA, IB= 0 IE= -10µA, IC= 0 VCB= -20V, IE=0 VBE= -4V, IC= 0 VCE= -2V, IC= -0.1A VCE= -2V, IC= |
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Fairchild Semiconductor |
PNP Silicon Darlington Transistor EB = - 5V, IC = 0 VCE = - 2V, IC = - 1.5A VCE = - 2V, IC = - 3A IC = - 1.5A, IB = - 1.5mA IC = - 1.5A, IB = - 1.5mA VCC = - 40V, IC = - 1.5A IB1 = - IB2 = - 1.5mA RL = 27Ω 2000 1000 - 0.9 - 1.5 0.5 2 1 Min. Typ. Max. - 10 -2 20000 - 1.2 -2 V V µs µs |
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Fairchild Semiconductor |
PNP Transistor -220F 1.Base 2.Collector 3.Emitter Value - 60 - 60 -7 -3 - 0.5 2 25 150 - 55 ~ 150 Units V V V A A W W °C °C Min. - 60 100 20 Typ. Max. - 100 - 100 320 Units V µA µA - 0.5 - 0.7 9 -1 V -1 V MHz G 150 ~ 320 ©2000 Fairchild Semiconductor |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor 50V, IE = 0 VCE = - 10V, IE = - 0.4A IC = - 500mA, IB = - 50mA VCE = - 10V, IC = - 0.4A 5 40 Min. - 200 - 150 -5 - 50 240 -1 V MHz Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semic |
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Fairchild Semiconductor |
Audio Frequency Power Amplifier acitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz 110 18 70 Min. -30 -25 -5 -0.1 400 -0.5 -1.2 V V MHz pF Ty |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor , IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz 3 130 40 15 -1 -1 Min. - 80 -5 - 70 - 100 240 - 1.7 - 1.5 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 R 40 |
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Fairchild Semiconductor |
Low Frequency Power Amplifier µH Clamped IC = - 6A, IB1 = - 12mA IB2 = 3mA, VBE(off) = 5V L = 180uH, Clamped VCB = - 100V, IE = 0 VCE = - 100V, RBE = 51Ω TC= 125°C VCE = - 100V, VBE(off) = 1.5V VCE = - 100V, VBE(off) = 1.5V TC = 125°C VEB = - 5V, IC = 0 VCE = - 2V, IC = - 3A VCE |
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Desde 2024. D4U Semiconductor.
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