KSB1151 |
Part Number | KSB1151 |
Manufacturer | Fairchild Semiconductor |
Description | KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector ... |
Features |
, Duty Cycle≤2% Pulsed
VCB = - 50V, IE = 0
VEB = - 7V, IC = 0
VCE = - 1V, IC = - 0.1A VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A
IC = - 2A, IB = - 0.2A
IC = - 2A, IB = - 0.2A
VCC = - 10V, IC = - 2A IB1 = - IB2 =0.2A RL = 5Ω
hFE Classification
Classification hFE2
O 100 ~ 200
Y 160 ~ 320
Value - 60 - 60 -7 -5 -8 -1 1.3 20 150 - 55 ~ 150
Units V V V A A A W W °C °C
Min.
60 100 50
Typ.
200 - 0.14 - 0.9 0.15 0.78 0.18
Max. - 10 - 10
400
- 0.3 - 1.2
1 2.5
1
Units µA µA
V V µs µs µs
G 200 ~ 400
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
KSB1151
Typical Characteristics
... |
Document |
KSB1151 Data Sheet
PDF 109.17KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KSB1151 |
JCET |
PNP Transistor | |
2 | KSB1151 |
INCHANGE |
PNP Transistor | |
3 | KSB1116 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
4 | KSB1116 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
5 | KSB1116A |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
6 | KSB1116A |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |