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| Part Number | KSB1151 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | KSB1151 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSB1151 TRANSISTOR (PNP) FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Current z High Power Dissipation z Complement to KSD1691 TO – 126 1. EMITTER 2. COLLECTOR 3. BASE 0$5.,1* B1151. |
| Features |
z Low Collector-Emitter Saturation Voltage z Large Collector Current z High Power Dissipation z Complement to KSD1691
TO – 126 1. EMITTER 2. COLLECTOR 3. BASE 0$5.,1* B1151 zXXX B1151 'HYLFH FoGH Solid dot = Green molding compound device, if none, the normal device ;;; &ode Equivalent Circuit ORDERING INFORMATION Part Number KSB1151 KSB1151-TU Package TO-126 TO-126 Packing Method Bulk Tube. |
| Part Number | KSB1151 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to KSD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS. |
| Features | llector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -1V hFE-2 DC Current Gain IC= -2A; VCE= -1V hFE-3 DC Current Gain IC= -5A; VCE= -2V Switching Times ton Turn-on Time tstg Storage Time . |
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