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| Part Number | KSB1017 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | KSB1017 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type KSD1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20. |
| Features | se specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A;. |
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| 8 | KSB1116 |
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| 9 | KSB1116 |
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| 10 | KSB1116A |
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Desde 2024. D4U Semiconductor.
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