KSB1017 |
Part Number | KSB1017 |
Manufacturer | Fairchild Semiconductor |
Description | KSB1017 KSB1017 Power Amplifier Applications • Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise not... |
Features |
V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz
Min. -80
40 15
Typ.
-1 -1 9 130
Max.
- 30 - 100 240
Units V µA µA
- 1.7 - 1.5
V V MHz pF
hFE Classification
Classification hFE1
R 40 ~ 80
O 70 ~ 140
Y 120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
IC[A], COLLECTOR CURRENT
-4.0 -3.2 -2.4 -1.6
IB = -140mA IB = -180mA IB = -160mA
IB = -120mA IB = -100mA IB = -80mA IB = -60mA
IB = -40mA
IB = -20mA
-0.8
-0.0 -0
IB = 0A
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10 IC=10IB
... |
Document |
KSB1017 Data Sheet
PDF 262.30KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KSB1015 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
2 | KSB1015 |
INCHANGE |
PNP Transistor | |
3 | KSB1017 |
INCHANGE |
PNP Transistor | |
4 | KSB1022 |
Fairchild Semiconductor |
PNP Silicon Darlington Transistor | |
5 | KSB1023 |
Fairchild Semiconductor |
PNP Silicon Darlington Transistor | |
6 | KSB1097 |
INCHANGE |
PNP Transistor |