| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
300V N-Channel MOSFET • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 77 nC) • Low Crss (Typ. 80 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairc |
|
|
|
|
Fairchild Semiconductor |
FDA59N25 • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V • Low gate charge (typical 63 nC) • Low Crss (typical 70 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ. @10V = 41mΩ Description Th |
|
|
|
|
Fairchild Semiconductor |
FDA70N20 • RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A • Low Gate Charge (Typ. 66 nC) • Low Crss (Typ. 89 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS techn |
|
|
|
|
Fairchild Semiconductor |
FDA28N50F • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFET TM Description These N-Channel enhancement mode powe |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A • Low Gate Charge (Typ. 66 nC) • Low Crss (Typ. 89 pF) • 100% Avalanche Tested Applications • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairchild Semico |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply June 2014 Description UniFETTM MOSFET is Fair |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 62A, 280V, RDS(on) = 0.051Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 83 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transis |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 84 pF) • Fast switching • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 166 mΩ (Typ.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 65 nC) • Low Crss (Typ. 32 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 14 A • Low Gate Charge (Typ. 80 nC) • Low Crss (Typ. 38 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply D |
|
|
|
|
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET • • • • • • RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant UltraFET tm Description This N-Channel MO |
|
|
|
|
Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET • RDS(on) = 1.46 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 345 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • 160 A Guarantee for 2 sec • RoHS Compliant Application • Power |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V • Low gate charge ( typical 56 nC) • Low Crss ( typical 96 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transist |
|
|
|
|
Fairchild Semiconductor |
500V N-Channel MOSFET • 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transi |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairc |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12 A • Low Gate Charge (Typ. 65 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 60 pF) • 100% Avalanche Tested • ESD Improved Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May |
|
|
|
|
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 88 mΩ (Typ.) @ VGS = 10 V, ID =16.5 A • Low Gate Charge (Typ. 36 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2007 TM Description These N-Channel enhancement mode power fie |
|
Desde 2024. D4U Semiconductor.
|