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FDA20N50 |
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| Part Number | FDA20N50 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power s... |
| Document |
 FDA20N50 Data Sheet
PDF 1.02MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDA20N50F |
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| 2 | FDA20N50_F109 |
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| 3 | FDA2002A |
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| 4 | FDA2002C |
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| 5 | FDA2002D |
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| 6 | FDA2002F |
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Desde 2024. D4U Semiconductor.
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