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FDAF69N25 |
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| Part Number | FDAF69N25 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 84 pF) • Fast switching • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode ... |
| Document |
 FDAF69N25 Data Sheet
PDF 657.80KB |
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