| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FDA70N20 • RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A • Low Gate Charge (Typ. 66 nC) • Low Crss (Typ. 89 pF) • 100% Avalanche Tested Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS techn |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P |
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Fairchild Semiconductor |
N-Channel MOSFET • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhanceme |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A • Low Gate Charge (Typ. 66 nC) • Low Crss (Typ. 89 pF) • 100% Avalanche Tested Applications • Uninterruptible Power Supply • AC-DC Power Supply May 2014 Description UniFETTM MOSFET is Fairchild Semico |
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Fairchild Semiconductor |
MOSFET • 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V • Low gate charge ( typical 85 nC) • Low Crss ( typical 150 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating GD S TO-247 FQH Series D ! |
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Fairchild Semiconductor |
N-Channel MOSFET • 15.3 A, 40 V. RDS(ON) = 7 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package: Enhanced thermal performance in industry-st |
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Fairchild Semiconductor |
70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG70N06, RFP70N06, RF1S70N06 and RF |
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Fairchild Semiconductor |
N-Channel MOSFET • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge (38nC typical) • FLMP SO-8 packag |
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Fairchild Semiconductor |
N-Channel MOSFET • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge (38nC typical) • FLMP SO-8 packag |
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Fairchild Semiconductor |
N-Channel MOSFET • 15.3 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package: Enhanced thermal performance in industry- |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3 |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PA |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
80V N-Channel MOSFET • • • • • • • 70A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PA |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • • 57A, 100V, RDS(on) = 0.023Ω @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-P |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components |
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Fairchild Semiconductor |
70A PDP IGBT • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint Application . PDP System June 2007 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesr |
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Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET • 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.0 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge (51nC typical) • FLMP SO-8 packag |
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Fairchild Semiconductor |
MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 42 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Po |
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Desde 2024. D4U Semiconductor.
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