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70N08 |
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| Part Number | 70N08 |
| Manufacturer | Fairchild Semiconductor |
| Description | Features • • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum... |
| Features |
• • • • • • • 77.5A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are... |
| Document |
 70N08 Data Sheet
PDF 703.54KB |
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