| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Param |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK SSW Series G D S I2-PAK SSI Series G! |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Param |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PD |
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Fairchild Semiconductor |
Amplifier Transistor ise Voltage Level : 2N6428 : 2N6428A Test Condition IC=100µA, IE=0 IC=1mA, IB=0 VCB=30V, IE=0 VCE=30V, IB=0 VBE=5V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=100µA VCE=5V, IC=1mA VCE=5V, IB=10mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=1mA, VCE=5V VCB=10V, IE=0, |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT us |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is |
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Fairchild Semiconductor |
N-Channel MOSFET • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 21 pF) • 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM D |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK G D S FQU Series G! ! |
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Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • PDP TV • S |
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Fairchild Semiconductor |
NPN Darlington Transistor ess otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N6427 625 5.0 83.3 200 Max *MMBT6427 350 2.8 357 Units mW mW/ °C °C/W °C/W *Device mounted |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • High Voltage Transistor • Collector-Emitter Voltage: VCBO = -350 V • Collector Dissipation: PC (max) = 625 mW • Complement to 2N6517 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Base 3. Collector Bent Lead Tape & Reel Ammo Packing |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel Power MOSFET |
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Fairchild Semiconductor |
N-CHANNEL Power MOSFET • 3.5A, 200V • rDS(ON) = 0.800Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6790 PACKAGE TO-205AF BRAND 2N6790 |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Desde 2024. D4U Semiconductor.
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