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FQU2N60C |
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| Part Number | FQU2N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 8.5 nC) Low Crss ( typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD2N60C / FQU2N60C 600 1.9 1.14 7.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A ... |
| Document |
 FQU2N60C Data Sheet
PDF 970.61KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQU2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQU2N60C |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FQU2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET |
|
| 4 | FQU2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 5 | FQU2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 6 | FQU2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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