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FQPF2N60C |
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| Part Number | FQPF2N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-... |
| Document |
 FQPF2N60C Data Sheet
PDF 1.42MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQPF2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 2 | FQPF2N60 |
Oucan Semi |
2A N-Channel MOSFET |
|
| 3 | FQPF2N60C |
HAOHAI |
N-Channel MOSFET |
|
| 4 | FQPF2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 5 | FQPF2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 6 | FQPF2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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