Excelliance MOS EMZ Hoja de datos

No.	parte #	Fabricante	Descripción
1	EMZB08P03H	Excelliance MOS	P-Channel Logic Level Enhancement Mode Field Effect Transistor ient3 Junction-to-Ambient3 RJC t ≦ 10s RJA Steady-State RJA 2.5 20 °C / W 50 2019/3/14 p.1 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. ECTRICAL CHARACTE
2	EMZB08P03V	Excelliance MOS	P-Channel Logic Level Enhancement Mode Field Effect Transistor th limited by maximum junction temperature. 2Duty cycle  1％ 6 °C / W 50 2019/6/25 p.1 350°C / W when mounted on a 1 in2 pad of 2 oz copper. EMZB08P03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST COND
3	EMZBB0N10J	Excelliance MOS	MOSFET
4	EMZB21A03VG	Excelliance MOS	MOSFET
5	EMZB08P03G	Excelliance MOS	P‐Channel Logic Level Enhancement Mode Field Effect Transistor W °C UNIT °C / W 2015/8/5 p.1 EMZB08P03G ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakag
6	EMZB21C03G	Excelliance MOS	MOSFET
7	EMZF50P02J	Excelliance MOS	MOSFET
8	EMZB20P03L	Excelliance MOS	MOSFET
9	EMZEA0P02Z	Excelliance MOS	MOSFET
10	EMZFA1P03Z	Excelliance MOS	MOSFET
11	EMZF60N03Z	Excelliance MOS	MOSFET
12	EMZF14R02W	Excelliance MOS	Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON)
13	EMZF14A02V	Excelliance MOS	MOSFET
14	EMZF20A02V	Excelliance MOS	MOSFET
15	EMZF20R02W	Excelliance MOS	MOSFET