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EMZB08P03G |
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| Part Number | EMZB08P03G |
| Manufacturer | Excelliance MOS |
| Description | EMZB08P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 8.5mΩ ID ‐15A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ESD Pr... |
| Features |
W °C
UNIT °C / W
2015/8/5 p.1
EMZB08P03G
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±12V VDS = ‐24V, VGS = 0V VDS = ‐20V, VGS = 0V, TJ = 125 °C VDS = ‐5V, VGS = ‐10V VGS = ‐10V, ID = ‐12A VGS = ‐4.5V, ID = ‐... |
| Document |
 EMZB08P03G Data Sheet
PDF 183.68KB |
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Desde 2024. D4U Semiconductor.
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