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EMZB08P03V |
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| Part Number | EMZB08P03V |
| Manufacturer | Excelliance MOS |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free... |
| Features |
th limited by maximum junction temperature. 2Duty cycle 1％
6 °C / W
50
2019/6/25 p.1
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
EMZB08P03V
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
On-State Drain Current1 Drain-Source On-State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS =... |
| Document |
 EMZB08P03V Data Sheet
PDF 875.29KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | EMZB08P03G |
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P?Channel Logic Level Enhancement Mode Field Effect Transistor |
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| 2 | EMZB08P03H |
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| 6 | EMZBB0N10J |
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Desde 2024. D4U Semiconductor.
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