| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ESMT |
3.3V 1 Gbit SPI-NAND Flash Memory Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Siz |
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ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K |
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ESMT |
1.8V 4-Gbit SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7 V ~ 1.95V) Single-level cell (SLC) technology Organization - Page size x1: 4352 bytes (4096 + 256 bytes) - Block size: 64 pages (256K + 16K bytes) - Plane size: 1 x 2048 blocks Standard and extended SPI-compatible se |
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ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K |
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ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K |
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ESMT |
3.3V 2 Gbit SPI-NAND Flash Memory Single-level cell (SLC) technology Organization - Page size x1: 2176 bytes (2048 + 128 bytes) - Block size: 64 pages (128K + 8K bytes) - Plane size: 2Gb (2 planes, 1024 blocks per plane) Standard and extended SPI-compatible serial bus interface |
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ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K |
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ESMT |
3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size |
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ESMT |
3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size |
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ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Si |
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ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Si |
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ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Si |
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ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Voltage Supply: 1.8V (1.7V~1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Si |
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Desde 2024. D4U Semiconductor.
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