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F50D1G41LB-66YG2ME |
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| Part Number | F50D1G41LB-66YG2ME |
| Manufacturer | ESMT |
| Description | ESMT Flash (Preliminary) F50D1G41LB (2M) 1.8V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Power-up Ready Time Max Reset Busy Time ... |
| Features |
Voltage Supply: 1.8V (1.7V~1.95V)
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us
Memory Cell: 1bit/Memory Cell Support SPI-Mode 0 and SPI-Mode 31
Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms
Hardware Data Protection - Program/Erase Lockout During Power Transitions
Reliable CMOS Floating Gate Technology - Internal ECC Requirement: 1bit/512Byt... |
| Document |
 F50D1G41LB-66YG2ME Data Sheet
PDF 0.96MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F50D1G41LB-66YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 2 | F50D1G41LB-50YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 3 | F50D1G41LB-50YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 4 | F50D2G41LB-50YG2M |
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1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory |
|
| 5 | F50D2G41LB-66YG2M |
ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory |
|
| 6 | F50D4G41XB |
ESMT |
1.8V 4-Gbit SPI-NAND Flash Memory |
|
Desde 2024. D4U Semiconductor.
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