Dynex Semiconductor GP2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GP2400ESM12	Dynex Semiconductor	Powerline N-Channel Single Switch IGBT Module s s s s Fig. 1 Electrical connections - (not to scale) External connection C1 Aux C C2 C3 n - Channel Enhancement Mode Non Punch Through Silicon High Gate Input Impedance Optimised For High Power High Frequency Operation 1200V Rating 2400A Per Modu
2	GP2400ESM18	Dynex Semiconductor	Hi-Reliability Single Switch IGBT Module s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 2400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 2400A 4800A APPLICATIONS s s s s External connection C1
3	GP2401ESM18	Dynex Semiconductor	Hi-Reliability Single Switch Low VCE(SAT) IGBT Module s s s s Low VCE(SAT) High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 2400A 4800A APPLICATIONS External connection s s s s High Re
4	GP200MKS12	Dynex Semiconductor	IGBT Chopper Module Preliminary Information s s s s Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s
5	GP201MHS18	Dynex Semiconductor	Low VCE(SAT) Half Bridge IGBT Module s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2)
6	GP250MHB06S	Dynex Semiconductor	Half Bridge IGBT Module s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) 600V 2.2V (max) 350A (max) 250A (max) 700A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2)
7	GP200MHS12	Dynex Semiconductor	Half Bridge IGBT Module s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controllers Induction He
8	GP200MHS18	Dynex Semiconductor	Half Bridge IGBT Module s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 200A 400A APPLICATIONS s s s s High Power Inverters Motor Controlle
9	GP200MLS12	Dynex Semiconductor	IGBT Chopper Module Preliminary Information s s s s Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 200A 400A APPLICATIONS s s s s s