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GP201MHS18 |
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| Part Number | GP201MHS18 |
| Manufacturer | Dynex Semiconductor |
| Description | GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Constr... |
| Features |
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 2.6V 200A 400A
APPLICATIONS
s s s s
11(C2) 1(E1C2) 2(E2)
6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
High Reliability Inverters Motor Controllers Traction Drives Resonant Converters
9(C1)
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mod... |
| Document |
 GP201MHS18 Data Sheet
PDF 129.26KB |
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