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GP200MHS18 |
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| Part Number | GP200MHS18 |
| Manufacturer | Dynex Semiconductor |
| Description | GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PAR... |
| Features |
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 200A 400A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters
11(C2) 1(E1C2) 2(E2)
6(G2) 7(E2) 3(C1) 5(E1) 4(G1)
9(C1)
The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate b... |
| Document |
 GP200MHS18 Data Sheet
PDF 135.70KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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