Cree E3M Hoja de datos

No.	parte #	Fabricante	Descripción
1	E3M0120090D	CREE	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qual
2	E3M0280090D	CREE	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qual
3	E3M0065090D	CREE	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qual
4	E3M0075120D	Cree	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Automotive Qualified
5	E3M0120090J	Cree	Silicon Carbide Power MOSFET • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between
6	E3M0075120K	Cree	Silicon Carbide Power MOSFET Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances