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E3M0075120K |
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| Part Number | E3M0075120K |
| Manufacturer | Cree |
| Description | E3M0075120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver s... |
| Features |
Package
• 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Tab Drain 1 234 D SSG Drain (Pin 1, TAB) • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switc... |
| Document |
 E3M0075120K Data Sheet
PDF 1.00MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | E3M0075120D |
Cree |
Silicon Carbide Power MOSFET |
|
| 2 | E3M0016120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 3 | E3M0021120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 4 | E3M0032120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 5 | E3M0045065K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | E3M0060065D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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