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E3M0120090J |
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| Part Number | E3M0120090J |
| Manufacturer | Cree |
| Description | E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • Hi... |
| Features |
• 3rd generation of SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source • Automotive qualified (AEC-Q101) and PPAP capable Benefits • Reduce switching losses and minimize gate ringing • High system efficiency • Increased power density • Increased system switching frequency Applications • EV charging • DC/DC converters • SMPS • UPS • Solar PV inverters Package Drain (TAB) Gate (Pin 1) Driver Sourc... |
| Document |
 E3M0120090J Data Sheet
PDF 0.96MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | E3M0120090D |
CREE |
Silicon Carbide Power MOSFET |
|
| 2 | E3M0016120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 3 | E3M0021120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 4 | E3M0032120K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 5 | E3M0045065K |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | E3M0060065D |
Wolfspeed |
Silicon Carbide Power MOSFET |
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Desde 2024. D4U Semiconductor.
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