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Jiangsu Changjiang Electronics |
2SC4115E Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B www.DataSheet4U.com 1. BASE |
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Jiangsu Changjiang Electronics |
2SC4115S 1) Low VCE(sat). www.DataSheet4U.com VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. zExternal dimensions (Unit : mm) 2SC4115S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 zStruct |
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Jiangsu Changjiang |
TRANSISTOR Power dissipation PCM: 0.15 W (Tamb=25℃) TRANSISTOR (NPN) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ E |
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Jiangsu Changjiang Electronics Technology |
TO-92 Plastic Encapsulate Transistors Power dissipation PCM: 400 mW (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TRANSISTOR (NPN) TO-92 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELEC |
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Jiangsu Changjiang Electronics |
2SC3243 Power dissipation PCM: 0.9 W (Tamb=25℃) TRANSISTOR (NPN) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current 1 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL |
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Changjiang |
NPN Transistor Power dissipation PCM: 0.75W (Tamb=25ºC) Collector Current ICM: 1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 40V Operating and storage junction temperature range TJ, Tstg: -55ºC to + 150ºC ELECTRICAL CHARACTER |
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Jiangsu Changjiang Electronics |
TRANSISTOR Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:CFQ, CFR, CFS C TOP B 1. BASE 2. EMITTER 3. COLLE |
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JIANGSU CHANGJIANG |
(2SC2230/A) NPN Transistor z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage 2SC2230 2SC2230A VEBO IC PC TJ Tstg Emit |
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JIANGSU CHANGJIANG |
NPN Transistor z High breakdown voltage(VCBO>900V) z Fast switching speed z Wide ASO MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren |
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JIANGSU CHANGJIANG |
NPN Transistor z High DC Current Gain 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power D |
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JIANGSU CHANGJIANG |
NPN Transistor z High DC Current Gain z Complementary to 2SA950 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-B |
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Jiangsu Changjiang Electronics |
Plastic Encapsulate Transistors Power dissipation PCM: 0.9 W (Tamb=25℃) TRANSISTOR (NPN) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current 1 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL |
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JIANGSU CHANGJIANG |
(2SC2230/A) NPN Transistor z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage 2SC2230 2SC2230A VEBO IC PC TJ Tstg Emit |
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Jiangsu Changjiang |
TRANSISTOR High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: RR,RO,RY C 2. EMITTER 3. C |
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Changjiang |
NPN Transistor Power dissipation PCM: 0.8W (Tamb=25ºC) Collector Current ICM: 0.1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 200V Operating and storage junction temperature range TJ, Tstg: -55ºC to + 150ºC ELECTRICAL CHARACT |
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Desde 2024. D4U Semiconductor.
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