2SC2130 |
Part Number | 2SC2130 |
Manufacturer | JIANGSU CHANGJIANG |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2130 TRANSISTOR (NPN) 1. EMITTER FEATURES z High DC Current Gain 2. COLLECTOR 3. BASE MAXIMUM ... |
Features |
z High DC Current Gain
2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 45 40 5 0.8 600 208 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off... |
Document |
2SC2130 Data Sheet
PDF 426.85KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2131 |
Mitsubishi Electric Semiconductor |
NPN Transistor | |
2 | 2SC2133 |
Mitsubishi Electric Semiconductor |
NPN Transistor | |
3 | 2SC2134 |
Mitsubishi Electric Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | 2SC2137 |
INCHANGE |
NPN Transistor | |
5 | 2SC2137 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC2139 |
INCHANGE |
NPN Transistor |