2SC2715M |
Part Number | 2SC2715M |
Manufacturer | Jiangsu Changjiang |
Description | NPN Epitaxial planar Silicon Transistor TOP B 1. BASE E C FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier Fo... |
Features |
High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: RR,RO,RY C
2. EMITTER 3. COLLECTOR
C BACK
E
B
RR
B E
AXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 35 30 4 50 150 150 -55-150 Units V V V mA mW ℃ ℃
ELECTRI... |
Document |
2SC2715M Data Sheet
PDF 146.30KB |
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