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N-Channel MOSFET 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-P |
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P-Channel Enhancement Mode Field Effect Transistor -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SE |
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P-Channel MOSFET -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED S |
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P-Channel MOSFET -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-26 |
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N-Channel Enhancement Mode Field Effect Transistor 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO |
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JCET |
SWITCHING DIODE z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability MARKING:P P P Solid dot = Green molding compound device, if none,the normal device. SOT-323 1 2 3 Maximum Ratings @Ta=25℃ Parameter |
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SWITCHING DIODE High Speed High Reliability Suitable for High Packing Density Layout APPLICATIONS High Speed Switching MARKING: P SOT-23 PP Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RATINGS ( Ta=25℃ unless otherwise not |
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CEP20N06 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP20N06/CEB20N06 D D G G |
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CET |
P-Channel MOSFET -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED S |
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CET |
P-Channel MOSFET Type CEP14P20 CEB14P20 CEF14P20 VDSS -200V -200V -200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID -13.5A -13.5A -13.5A d @VGS -10V -10V -10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating |
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P-Channel MOSFET Type CEP14P20 CEB14P20 CEF14P20 VDSS -200V -200V -200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID -13.5A -13.5A -13.5A d @VGS -10V -10V -10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating |
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CET |
P-Channel MOSFET Type CEP14P20 CEB14P20 CEF14P20 VDSS -200V -200V -200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID -13.5A -13.5A -13.5A d @VGS -10V -10V -10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating |
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Desde 2024. D4U Semiconductor.
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