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CEP20A03 |
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| Part Number | CEP20A03 |
| Manufacturer | CET |
| Description | CEP20A03/CEB20A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V. Super high dense cell design for extreme... |
| Features |
30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID
IDM PD
30
±20
197 124 788 139
1.1
... |
| Document |
 CEP20A03 Data Sheet
PDF 396.44KB |
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Desde 2024. D4U Semiconductor.
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