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P20N06 |
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| Part Number | P20N06 |
| Manufacturer | CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and curr... |
| Features |
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP20N06/CEB20N06
D
D
G
G S CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Symbol Limit V... |
| Document |
 P20N06 Data Sheet
PDF 430.65KB |
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