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N-Channel Enhancement Mode Field Effect Transistor 55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP3205/CEB3205 PRELIMINARY D D G G D S S CEB SER |
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N-Channel MOSFET 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263 |
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N-Channel MOSFET Type CEP12N6 CEB12N6 CEF12N6 VDSS 600V 600V 600V RDS(ON) 0.65Ω 0.65Ω 0.65Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D |
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N-Channel MOSFET 70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD |
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N-Channel MOSFET 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD |
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N-Channel MOSFET 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-P |
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N-Channel MOSFET Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free |
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N-Channel MOSFET 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES |
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N-Channel MOSFET 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP50N06/CEB50N06 D D G G D S S CEB SERIES TO-2 |
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N-Channel MOSFET Type CEP9060R CEB9060R CEF9060R VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 100A 100A 100A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. T |
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N-Channel Enhancement Mode Field Effect Transistor 40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263 |
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N-Channel MOSFET 30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V. RDS(ON) = 6.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO- |
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N-Channel MOSFET 60V, 60A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-2 |
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N-Channel MOSFET 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO- |
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N-Channel MOSFET Type CEP02N7G CEB02N7G CEF02N7G VDSS 700V 700V 700V RDS(ON) 6.75Ω 6.75Ω 6.75Ω ID 2A 2A 2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D |
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P-Channel Enhancement Mode Field Effect Transistor -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SE |
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N-Channel MOSFET Type CEP09N7A CEB09N7A CEF09N7A VDSS 700V 700V 700V RDS(ON) 1.2Ω 1.2Ω 1.2Ω ID 8A 8A 8A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G S CE |
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N-Channel MOSFET Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is |
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P-Channel MOSFET -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES |
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N-Channel MOSFET 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 D G G S G D S S CEP SERIES TO-220 CEB SERIES TO-263(DD |
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Desde 2024. D4U Semiconductor.
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